Diodes ZX5T2E6 Manual de usuario descargar pdf (Pagina 2)

ZX5T2E6

SEMICONDUCTORS

ISSUE 1 - MAY 2004

PARAMETER SYMBOL LIMIT UNIT

Collector-base voltage BV

CBO

-25

Collector-emitter voltage BV

CEO

-20 V

Emitter-base voltage BV

EBO

-7.5 V

Continuous collector current I

-3.5 A

Peak pulse current I

-10 A

Power dissipation at T

= 25°C

(a)

Linear derating factor

1.1

8.8

mW/° C

Power dissipation at T

= 25°C

(b)

Linear derating factor

1.7

13.6

mW/° C

Operating and storage temperature range T

stg

-55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL VALUE UNIT

Junction to ambient

(a)

⍜JA

113 °C/W

Junction to ambient

(b)

⍜JC

73 °C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b) As above measured at t< 5 seconds.

THERMAL RESISTANCE

1 2 3 4 5 6

TOP VIEW 1
ORDERING INFORMATION 1
ABSOLUTE MAXIMUM RATINGS 2
THERMAL RESISTANCE 2
CHARACTERISTICS 3
ISSUE 1 - MAY 2004 4
TYPICAL CHARACTERISTICS 5
PACKAGE DIMENSIONS 6

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