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DMP22D6UT
Document number: DS31585 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMP22D6UT
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 1) Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
-430
-310
mA
Pulsed Drain Current (Note 3)
I
DM
-750 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
P
D
150 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
833 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
V
GS
= 0V, I
D
= -250mA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1.0
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±1.0 μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
-0.5
⎯
-1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
0.7
1.1
1.7
1.1
1.6
2.6
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
⎯ ⎯
ms
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 5)
V
SD
⎯ ⎯
-1.4 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ ⎯
175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯ ⎯
30 pF
Reverse Transfer Capacitance
C
rss
⎯ ⎯
20 pF
Notes: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
SOT-523
TOP VIEW
E
q
uivalent Circuit
TOP VIEW
Source
Gate
Protection
Diode
Gate
Drai
n
G
S
D
ESD PROTECTED
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Indice de contenidos

Pagina 1 - DMP22D6UT

DMP22D6UT Document number: DS31585 Rev. 2 - 2 1 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT P-CHANNEL ENHANCEMENT

Pagina 2 - NEW PRODUCT

DMP22D6UT Document number: DS31585 Rev. 2 - 2 2 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT 00-V , DRAIN-SOURCE

Pagina 3 - T , AMBIENT TEMPERATURE (°C)

DMP22D6UT Document number: DS31585 Rev. 2 - 2 3 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT T , AMBIENT TEMPERAT

Pagina 4 - © Diodes Incorporated

DMP22D6UT Document number: DS31585 Rev. 2 - 2 4 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT Package Outline Dime

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