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DMP22D6UT

Document number: DS31585 Rev. 2 - 2

1 of 4

www.diodes.com

November 2008

DMP22D6UT

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Gate

• "Green" Device (Note 4)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin annealed over Alloy 42 Leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.002 grams (approximate)

Maximum Ratings @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±8 V

Drain Current (Note 1) Steady

State

= 25°C

= 85°C

-430

-310

Pulsed Drain Current (Note 3)

-750 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)

150 mW

Thermal Resistance, Junction to Ambient

833 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

DSS

-20

⎯ ⎯

= 0V, I

= -250mA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

-1.0

μA

= -20V, V

= 0V

Gate-Source Leakage

GSS

⎯ ⎯

±1.0 μA

= ±4.5V, V

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

(

)

-0.5

⎯

-1.0 V

= V

, I

= -250μA

Static Drain-Source On-Resistance

DS (ON)

⎯

0.7

1.1

1.7

1.1

1.6

2.6

= -4.5V, I

= -430mA

= -2.5V, I

= -300mA

= -1.8V, I

= -150mA

Forward Transfer Admittance

200

⎯ ⎯

=10V, I

= 0.2A

Diode Forward Voltage (Note 5)

⎯ ⎯

-1.4 V V

= 0V, I

= -115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

iss

⎯ ⎯

175 pF

= -16V, V

= 0V

f = 1.0MHz

Output Capacitance

oss

⎯ ⎯

30 pF

Reverse Transfer Capacitance

rss

⎯ ⎯

20 pF

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

SOT-523

TOP VIEW

uivalent Circuit

TOP VIEW

Source

Gate

Protection

Diode

Gate

Drai

ESD PROTECTED

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Indice de contenidos

Pagina 1 - DMP22D6UT

DMP22D6UT Document number: DS31585 Rev. 2 - 2 1 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT P-CHANNEL ENHANCEMENT

Pagina 2 - NEW PRODUCT

DMP22D6UT Document number: DS31585 Rev. 2 - 2 2 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT 00-V , DRAIN-SOURCE

Pagina 3 - T , AMBIENT TEMPERATURE (°C)

DMP22D6UT Document number: DS31585 Rev. 2 - 2 3 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT T , AMBIENT TEMPERAT

DMP22D6UT Document number: DS31585 Rev. 2 - 2 4 of 4 www.diodes.com November 2008© Diodes Incorporated DMP22D6UTNEW PRODUCT Package Outline Dime

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