Diodes ZXTC2045E6 Manual de usuario Pagina 2

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ZXTC2045E6
Document Number: DS33645 Rev: 2 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
ZXTC2045E6
ADVANCE INFORMATION
A
Product Line o
f
Diodes Incorporated
Maximum Ratings – Q1 (NPN Transistor) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEV
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
1.5 A
Peak Pulsed Collector Current
I
CM
5 A
Base Current
I
B
1 A
Maximum Ratings – Q2 (PNP Transistor) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEV
-40 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-1.5 A
Peak Pulsed Collector Current
I
CM
-5 A
Base Current
I
B
-1 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P
D
0.7
5.6
W
mW/°C
(Notes 7 & 10)
0.9
7.2
(Notes 7 & 11)
1.1
8.8
(Notes 8 & 10)
1.1
8.8
(Notes 9 & 10)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 6 & 10)
R
θ
JA
179
°C/W
(Notes 7 & 10) 139
(Notes 7 & 11) 113
(Notes 8 & 10) 113
(Notes 9 & 10) 73
Thermal Resistance, Junction to Lead (Note 12)
R
θ
JL
95.50
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as note (8), except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active dice running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
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