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NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 2  JULY 1995

FEATURES

* 10A Peak pulse current

* Excellent h

characteristics up to10A (pulsed)

* Extremely low saturation voltage e.g. 7mV typ.

cont 3.5A

APPLICATIONS

* Power MOSFET gate driver in conjunction with

complementary ZTX718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

20 V

Collector-Emitter Voltage V

CEO

20 V

Emitter-Base Voltage V

EBO

Peak Pulse Current I

10 A

Continuous Collector Current I

3.5 A

Base Current I

500 mA

Practical Power Dissipation* P

totp

1.5 W

Power Dissipation P

tot

Operating and Storage Temperature Range T

stg

-55 to +200 °C

* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX618

E-Line

TO92 Compatible

D=1(D.C.)

D=0.2

D=0.1

D=0.05

D=0.5

Single Pulse

D=t1

Transient Thermal Resistance

Pulse Width

0.1ms

100

140

180

1ms 10ms 100ms 10s 100s1s

160

120

Derating curve

T -Temperature

(° C)

Dissi

Ambi

per

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:

Junction to Ambient

th(j-amb)1

th(j-amb)2



175

116

°C/W

 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by

Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in

D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide

Germany USA Kwai Fong, Hong Kong

Zetex plc 1997

Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet:

Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied

or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or

services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any

product or service.

1 2 3 4

Indice de contenidos

Pagina 1 - HIGH GAIN TRANSISTOR

NPN SILICON PLANAR MEDIUM POWERHIGH GAIN TRANSISTORISSUE 2  JULY 1995FEATURES* 10A Peak pulse current* Excellent hFE characteristics up to10A (pulsed

Pagina 2 - TYPICAL CHARACTERISTICS

0.200.300.10.40.20.3-55°C100°C25°CI /I =50I /I =10I/I =50I/I =10025°C25°C100°C-55°C25°C100°C-55°CI /I =50V =2V25°C100°C-55°CV =2V1.00.80.40.60.201.211

Pagina 3

0.200.300.10.40.20.3-55°C100°C25°CI /I =50I /I =10I/I =50I/I =10025°C25°C100°C-55°C25°C100°C-55°CI /I =50V =2V25°C100°C-55°CV =2V1.00.80.40.60.201.211

Pagina 4

NPN SILICON PLANAR MEDIUM POWERHIGH GAIN TRANSISTORISSUE 2  JULY 1995FEATURES* 10A Peak pulse current* Excellent hFE characteristics up to10A (pulsed

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