Diodes FMMT597 Manual de usuario descargar pdf (Pagina 2)

SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 - OCTOBER 1995

COMPLEMENTARY TYPE FMMT497

PARTMARKING DETAIL - 597

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-300 V

Collector-Emitter Voltage V

CEO

-300 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-1 A

Continuous Collector Current I

C

-0.2 A

Base Current I

B

-200 mA

Power Dissipation at T

amb

=25°C P

tot

500 mW

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.

Collector-Base Breakdown Voltage V

(BR)CBO

-300 V

I

C

=-100µA

Collector-Emitter Breakdown Voltage V

(BR)CEO

-300 V I

C

=-10mA*

Emitter-Base Breakdown Voltage V

(BR)EBO

-5 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-100 nA V

CB

=-250V

Emitter Cut-Off Current I

EBO

-100 nA V

EB

=-4V

Collector-Emitter Cut-Off Current I

CES

-100 nA V

CES

=-250V

Emitter Saturation Voltages V

CE(sat)

-0.25

-0.25

V

V

I

C

=-50mA, I

B

=-5mA

I

C

=-100mA,

I

B

=-20mA*

V

BE(sat)

-1.0 V I

C

=-100mA,

I

B

=-20mA*

Base-Emitter Turn-on Voltage V

BE(on)

-0.85 V I

C

=-100mA,V

CE

=-10V*

Static Forward Current Transfer Ratio h

FE

100

100

100

300

I

C

=-1mA, V

CE

=-10V

I

C

=-50mA,V

CE

=-10V*

I

C

=-100mA,V

CE

=-10V*

Transition Frequency f

T

75 MHz I

C

=-50mA, V

CE

=-10V

f=100MHz

Output Capacitance C

obo

10 pF V

CB

=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

FMMT597

C

B

E

3 - 145

FMMT597

3 - 146

IC-Collector Current

VBE(sat) v IC

0

0.2

100mA10mA

0.4

0.6

0.8

0.9

1A

hFE V IC

IC-Collector Current

1mA

100mA10mA 1A

80

0

240

160

320

10mA

1mA

IC-Collector Current

VBE(on) v IC

100mA 1A

0.6

0.8

0.9

0.4

0.2

0

I

C

-Collector Current

VCE(sat) v IC

1mA

0

0.1

100mA10mA

0.2

0.3

0.4

1A

1

0.1

Safe Operating Area

V

CE

- Collector Emitter Voltage (V)

10

100

1

1mA

0.01

0.4

0.6

1A10mA 100mA1mA

VCE(sat) v IC

I

C

-Collector Current

0.4

0

0.1

0.5

0.3

0.2

0.6

1000

0.001

+25°C

I /I =10

I /I =50

-55° C

+100° C

+25° C

V =10V

+100° C

+25° C

-55° C

I /I =10

-55° C

+25° C

+100° C

DC

100ms

1s

10ms

1ms

100

µ

s

V =10V

-55° C

+25° C

+100° C

I /I =10

TYPICAL CHARACTERISTICS

1 2

TYPICAL CHARACTERISTICS 1

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