
SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 500 mW
PARTMARKING DETAIL 455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
160 V
Collector-Emitter Voltage V
CEO
140 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Base Current I
B
200 mA
Power Dissipation at T
amb
=25°C P
tot
500 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160 V
I
C
=100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
140 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.1
µA
V
CB
=140V
Emitter Cut-Off Current I
EBO
0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7 V I
C
=150mA, I
B
=15mA
Static Forward Current
Transfer Ratio
h
FE
100
10 Typ
300 I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT455
SOT23
C
B
E
FMMT455
3 - 1103 - 111
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I -
Collector Current (Amps)
V
-
(V
ol
ts
)
I - Collector Current (Amps) I - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I - Collector Current (Amps)
V
BE(on)
v I
C
h
-
Nor
m
al
i
sed
G
ai
n (
%)
V
-
(V
ol
ts
)
V
-
(V
olts)
Typical Switching Speeds
I -
Collector Current (Amps)
S
w
i
t
chi
ng
tim
e
10
1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
1100.1
0.1
100
0.01
µ
1000
0.001
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