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Diodes DRTR5V0U1SO Manual de usuario Pagina 2

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DRTR5V0U1SO
Document number: DS35027 Rev. 3 - 2
2 of 4
www.diodes.com
July 2013
© Diodes Incorporated
DRTR5V0U1SO
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
5 A 8/20µs, Per Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±8 kV Standard IEC 61000-4-2
ESD Protection – Air Discharge
V
ESD_Air
±15 kV Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5.5 V —
Channel Leakage Current (Note 6, 7)
I
R
— 1 100 nA
V
R
= 3V
Reverse breakdown voltage
V
BR
6.0 — 9.0 V
I
R
= 1mA, from pin 2 to pin 3
Forward Voltage
V
F
— 0.8 — V
I
F
= 8mA
Dynamic Resistance
R
DYN
— 0.9 —
Ω
I
PP
= 1A, t
p
= 8/20μs
I/O to GND Capacitance
C
(I/O-GND)
— 1.0 1.5 pF
V
(I/O-GND)
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Measured from pin 1 and pin 2 to GND.
8. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
0
125 175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
25
100
50 75
150
200
Note 5
250
300
350
400
0
50
25 50
75 100 125
150
P
EAK
P
U
LSE DE
R
A
T
I
N
G
%
O
F
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200
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