Diodes DMN62D0LFD Manual de usuario Pagina 2

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DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN62D0LFD
ADVANCE INFORMATION
NEW PRODUCT
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 4.0V
T
A
= +25°C
T
A
= +70°C
I
D
310
260
mA
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
I
DM
1.0 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
P
D
0.48 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
JA
265 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1.0 A
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±5V, V
DS
= 0V
— —
±500 nA
V
GS
= ±10V, V
DS
= 0V
— —
±2.0 A
V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 — 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
1.3 2
V
GS
= 4V, I
D
= 100mA
1.4 2.5
V
GS
= 2.5V, I
D
= 50mA
1.8 3
V
GS
= 1.8V, I
D
= 50mA
2.4
V
GS
= 1.5V, I
D
= 10mA
Forward Transfer Admittance
|Y
fs
|
1.8
S
V
DS
= 10V, I
D
= 200mA
Diode Forward Voltage
V
SD
0.8 1.3 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
31
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
4.3
Reverse Transfer Capacitance
C
rss
3.0
Gate Resistance
R
g
99
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
0.5
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
0.09
Gate-Drain Charge
Q
gd
0.07
Turn-On Delay Time
t
D(on)
2.6
ns
V
GS
= 10V, V
DS
= 30V,
R
L
= 150, R
G
= 25,
I
D
= 200mA
Turn-On Rise Time
t
r
2.1
ns
Turn-Off Delay Time
t
D(off)
18
ns
Turn-Off Fall Time
t
f
8.7
ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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