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Diodes DMMT3906 Manual de usuario Pagina 2

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Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
⎯
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
⎯
V
I
E
= -10μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current
I
BL
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain (Note 7)
h
FE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
⎯
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5 pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0 12
kΩ
Voltage Feedback Ratio
h
re
0.1 10 x 10
-4
Small Signal Current Gain
h
fe
100 400
⎯
Output Admittance
h
oe
3.0 60
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA, f = 100MHz
Noise Figure NF
⎯
4.0 dB
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35 ns
Rise Time
t
r
⎯
35 ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Storage Time
t
s
⎯
225 ns
Fall Time
t
f
⎯
75 ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. The DC current gain, h
FE
, is matched at I
C
= -10mA and V
CE
= -1.0V with typical matched tolerances of 1% and maximum of 2%.
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature, Total Device
A
150
200
250
300
350
0
1
100
10
0.1
1
10
100
C
, I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E (p
F
)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
CB
DS30293 Rev. 6 - 2 2 of 4
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DMMT3906
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