Diodes D12V0L1B2LP Manual de usuario Pagina 2

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D12V0L1B2LP
Document number: DS36846 Rev. 2 - 2
2 of 5
www.diodes.com
June 2014
© Diodes Incorporated
D12
V
0L1B2LP
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation
P
PP
100 W 8/20µs, Figure 3
Peak Pulse Current
I
PP
4 A 8/20µs, Figure 3
ESD Protection – Contact Discharge
V
ESD_Contact
±30 kV IEC 61000-4-2 Standard
ESD Protection – Air Discharge
V
ESD_Air
±30 kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
V
RWM
— — 12 V
Channel Leakage Current (Note 6)
I
RM
1 50 nA
V
RWM
= 12V
Clamping Voltage, IEC 61000-4-5
V
CL
— 20
V
I
PP
= 1A, tp = 8/20μS
— 25
I
PP
= 4A, tp = 8/20μS
Breakdown Voltage
V
BR
13 — V
I
R
= 1mA
Channel Input Capacitance
C
T
10 13 pF
V
R
= 0V, f = 1MHz
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0125175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
ATI
O
N (mW)
D
25 10050 75 150
25
75
125
250
175
Note 5
200
225
0
50
25 50
75 100 125
150
P
EAK
P
U
LSE
D
E
R
A
T
I
N
G
%
O
F
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200
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