Diodes ZXMN6A09G Manual de usuario Pagina 2

  • Descarga
  • Añadir a mis manuales
  • Imprimir
  • Pagina
    / 8
  • Tabla de contenidos
  • MARCADORES
  • Valorado. / 5. Basado en revisión del cliente
Vista de pagina 1
ZXMN6A09G
Issue 3 - June 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
=10V; T
amb
=25°C
(b)
I
D
7.5 A
@ V
GS
=10V; T
amb
=70°C
(b)
6
@ V
GS
=10V; T
amb
=25°C
(a)
5.4
Pulsed drain current
(c)
I
DM
33 A
Continuous source current (body diode)
(b)
I
S
3.5 A
Pulsed source current (body diode)
(c)
I
SM
33 A
Power dissipation at T
amb
=25°C
(a)
P
D
2W
Linear derating factor 16 mW/°C
Power dissipation at T
amb
=25°C
(b)
P
D
3.9 W
Linear derating factor 31 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a)
R
JA
62.5 °C/W
Junction to ambient
(b)
R
JA
32.2 °C/W
Vista de pagina 1
1 2 3 4 5 6 7 8

Comentarios a estos manuales

Sin comentarios