Diodes ZXMC3A16DN8 Manual de usuario descargar pdf (Pagina 5)

ZXMC3A16DN8

ISSUE 1 - OCTOBER 2005

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage V

(BR)DSS

-30 V

=-250µA, V

=0V

Zero Gate Voltage Drain Current I

DSS

-1.0 ␮AV

=-30V, V

=0V

Gate-Body Leakage I

GSS

100 nA V

=⫾20V, V

=0V

Gate-Source Threshold Voltage V

GS(th)

1.0 V I

=-250␮A, V

Static Drain-Source On-State

Resistance

(1)

DS(on)

0.048

0.070

⍀

=-10V, I

=-4.2A

=-4.5V, I

=-3.4A

Forward Transconductance

(1)(3)

9.2 S V

=-15V,I

=-4.2A

DYNAMIC

(3)

Input Capacitance C

iss

970 pF

=-15 V, V

=0V,

f=1MHz

Output Capacitance C

oss

166 pF

Reverse Transfer Capacitance C

rss

116 pF

SWITCHING

(2) (3)

Turn-On Delay Time t

d(on)

3.8 ns

=-15V, I

=-1A

=6.0Ω,V

=-10V

Rise Time t

6.1 ns

Turn-Off Delay Time t

d(off)

35 ns

Fall Time t

19 ns

Gate Charge Q

12.9 nC V

=-15V,V

=-5V,

=-4.2A

Total Gate Charge Q

24.9 nC

=-15V,V

=-10V,

=-4.2A

Gate-Source Charge Q

2.67 nC

Gate-Drain Charge Q

3.86 nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

-0.85 -0.95 V T

=25°C, I

=-3.6A,

=0V

Reverse Recovery Time

(3)

21.2 ns T

=25°C, I

=-2A,

di/dt= 100A/µs

Reverse Recovery Charge

(3)

18.7 nC

P-CHANNEL

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

1 2 3 4 5 6 7 8 9 10

ZXMC3A16DN8 1

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