Diodes DMN2005LPK Manual de usuario descargar pdf (Pagina 4)

DMN2005LPK

Document number: DS30836 Rev. 9 - 2

4 of 6

www.diodes.com

June 2012

DMN2005LPK

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 250µA

I = 1mA

0.4

0.8

1.2

1.6

0 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

0.2

I, S

(A)

T = 25°C

0 5 10 15 20

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

E (p

)

f = 1MHz

iss

oss

rss

0.1

100

1,000

2 4 6 8 10 12 14 16 18 20

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

I, D

AIN-S

E LEAKA

(nA)

DSS

T = 25°C

T = 85°C

T = 125°C

T = 150°C

T = -55°C

0 0.1 0.2 0.3 0.4 0.5 0.6

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

V = 10V

I = 250mA

1 2 3 4 5 6

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