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SOT23 P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 - JANUARY 1996

PARTMARKING DETAIL  MX

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

-45 V

Continuous Drain Current at T

amb

=25°C I

-90 mA

Pulsed Drain Current I

-1.6 A

Gate Source Voltage V

± 20

Power Dissipation at T

amb

=25°C P

tot

330 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

DSS

-45 -70 V

=-100µA, V

=0V

Gate-Source Threshold

Voltage

GS(th)

-1 -3.5 V I

=-1mA, V

= V

Gate-Body Leakage I

GSS

-20 nA V

=-15V, V

=0V

Zero Gate Voltage Drain

Current

DSS

-0.5.

µA

=-25V, V

=0V

Static Drain-Source On-State

Resistance (1)

DS(on)

914

Ω

=-10V,I

=-200mA

Forward Transconductance

(1)(2)

90 mS V

=-10V,I

=-200mA

Input Capacitance (2) C

iss

25 pF V

=-10V, V

=0V,

f=1MHz

Turn-On Delay Time (2)(3) t

d(on)

10 ns

≈-25V, I

=-200mA

Rise Time (2)(3) t

10 ns

Turn-Off Delay Time (2)(3) t

d(off)

10 ns

Fall Time (2)(3) t

10 ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

BS250F

SOT23

3 - 55

1 2 3

Indice de contenidos

Pagina 1 - MODE VERTICAL DMOS FET

SOT23 P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996PARTMARKING DETAIL  MXABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrai

Pagina 2 - TYPICAL CHARACTERISTICS

BS250F3 - 57BS250FTYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID - Drain Current (Amps)-0.8-0.6-0.4 0-0.2-1.0Tr

Pagina 3

BS250F3 - 57BS250FTYPICAL CHARACTERISTICSOutput Characteristics VDS - Drain Source Voltage (Volts) ID - Drain Current (Amps)-0.8-0.6-0.4 0-0.2-1.0Tr

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