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SM-8 DUAL PNP MEDIUM POWER

TRANSISTORS

ISSUE 1 - NOVEMBER 1995

PARTMARKING DETAIL  T749

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-35 V

Collector-Emitter Voltage V

CEO

-25 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

-6 A

Continuous Collector Current I

-2 A

Operating and Storage Temperature Range T

stg

-55 to +150 °C

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T

amb

= 25°C*

Any single die on

Both die on equally

tot

2.25

2.75

Derate above 25°C*

Any single die on

Both die on equally

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

55.6

45.5

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

ZDT749

3 - 351

SM-8

(8 LEAD SOT223)

1 2 3

Indice de contenidos

Pagina 1 - TRANSISTORS

SM-8 DUAL PNP MEDIUM POWERTRANSISTORSISSUE 1 - NOVEMBER 1995 PARTMARKING DETAIL  T749ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-

Pagina 2 - ZDT749 ZDT749

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-BaseBreakdown VoltageV(B

Pagina 3

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.Collector-BaseBreakdown VoltageV(B

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