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Diodes DMB54D0UDW Manual de usuario

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DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
1 of 7
www.diodes.com
December 2009
© Diodes Incorporated
DMB54D0UDW
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR
Features
• N-Channel MOSFET and PNP Transistor in One Package
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead, Halogen and Antimony Free, RoHS Compliant (Note
2)
• ESD Protected MOSFET Gate up to 2kV
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42 lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.006 grams (approximate)
Maximum Ratings – MOSFET, Q1 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 1) Continuous
I
D
160 mA
Pulsed Drain Current (Note 1)
I
DM
560 mA
Maximum Ratings - PNP Transistor, Q2 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current
I
C
-100 mA
Thermal Characteristics, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
500
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SOT-363
TOP VIEW
Internal Schematic
TOP VIEW
ESD protected gate up to 2kV
E
D
2
S
2
Q
1
G
2
Q
2
B
C
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Indice de contenidos

Pagina 1 - DMB54D0UDW

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 1 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW N-CHANNEL ENHANCEMENT MODE MOSFE

Pagina 2

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 2 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW Electrical Characteristics -

Pagina 3

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 3 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW MOSFET Fig. 1 Typical Output Ch

Pagina 4 - MOSFET (continued)

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 4 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW MOSFET (continued) V , GATE THR

Pagina 5 - © Diodes Incorporated

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 5 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW PNP Transistor 1101001,00011010

Pagina 6

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 6 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW Package Outline Dimensions

Pagina 7

DMB54D0UDW Document number: DS31677 Rev. 4 - 2 7 of 7 www.diodes.com December 2009© Diodes Incorporated DMB54D0UDW IMPORTANT NOTICE DIODES I

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