Diodes DMB53D0UV Manual de usuario descargar pdf

DMB53D0UV

Document number: DS31651 Rev. 7 - 2

1 of 7

www.diodes.com

March 2012

DMB53D0UV

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features

• N-Channel MOSFET and NPN Transistor in One Package

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected MOSFET Gate up to 2kV

• Lead, Halogen and Antimony Free, RoHS Compliant (Note

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

DMB53D0UV-7 SOT563 3000/Tape & Reel

DMB53D0UV-13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MB1 = Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

MB1

SOT563

Top View

Internal Schematic

Bottom View

ESD PROTECTED TO 2kV

1 2 3 4 5 6 7

Indice de contenidos

Pagina 1 - DMB53D0UV

DMB53D0UV Document number: DS31651 Rev. 7 - 2 1 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PL

Pagina 2

DMB53D0UV Document number: DS31651 Rev. 7 - 2 2 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV Maximum Ratings – MOSFET, Q1 @TA

Pagina 3

DMB53D0UV Document number: DS31651 Rev. 7 - 2 3 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV Electrical Characteristics - NPN T

Pagina 4

DMB53D0UV Document number: DS31651 Rev. 7 - 2 4 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV Fig. 3 Typical On-Resistance vs. D

Pagina 5 - NPN Transistor

DMB53D0UV Document number: DS31651 Rev. 7 - 2 5 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV -50 050100 150250200150501000T , AM

DMB53D0UV Document number: DS31651 Rev. 7 - 2 6 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV Package Outline Dimensions

Pagina 7

DMB53D0UV Document number: DS31651 Rev. 7 - 2 7 of 7 www.diodes.com March 2012© Diodes Incorporated DMB53D0UV IMPORTANT NOTICE DIODES INCORPO

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