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Diodes 2DB1713 Manual de usuario

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2DB1713
Document number: DS31634 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1713
NEW PRODUCT
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary NPN Type Available (2DD2678)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Peak Pulse Current
I
CM
-6 A
Continuous Collector Current
I
C
-3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θ
JA
139 °C/W
Power Dissipation (Note 4) @ T
A
= 25°C P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
R
θ
JA
62.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
-15
⎯ ⎯
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
-12
⎯ ⎯
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
-6
⎯ ⎯
V
I
E
= -10μA, I
C
= 0
Collector Cut-Off Current
I
CBO
⎯ ⎯
-0.1
μA
V
CB
= -15V, I
E
= 0
Emitter Cut-Off Current
I
EBO
⎯ ⎯
-0.1
μA
V
EB
= -6V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE
(
SAT
)
⎯
-120 -250 mV
I
C
= -1.5A, I
B
= -30mA
DC Current Gain
h
FE
270
⎯
680
⎯ V
CE
= -2V, I
C
= -500mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
40
⎯
pF
V
CB
= -10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product
f
T
⎯
180
⎯
MHz
V
CE
= -2V, I
C
= -100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
4
3
2
1
C
C
B
E
T
O
P
V
I
E
W
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Indice de contenidos

Pagina 1

2DB1713 Document number: DS31634 Rev. 2 - 2 1 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1713NEW PRODUCT LOW VCE(SAT) PNP SURFACE

Pagina 2 - NEW PRODUCT

2DB1713 Document number: DS31634 Rev. 2 - 2 2 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1713NEW PRODUCT 00P , POWER DISSIPATION

Pagina 3 - © Diodes Incorporated

2DB1713 Document number: DS31634 Rev. 2 - 2 3 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1713NEW PRODUCT 0.1 1 10 100V , REVERSE

Pagina 4 - Suggested Pad Layout

2DB1713 Document number: DS31634 Rev. 2 - 2 4 of 4 www.diodes.com December 2008© Diodes Incorporated 2DB1713NEW PRODUCT Suggested Pad Layout

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